Extreme Materials

New form of silicon could enable next-gen electronic and energy devices

Visualization of the structure of 4H-Si viewed perpendicular to the hexagonal axis. A transmission electron micrograph showing the stacking sequence is displayed in the background.

A team led by Carnegie’s Thomas Shiell and Timothy Strobel developed a new method for synthesizing a novel crystalline form of silicon with a hexagonal structure that could potentially be used to create next-generation electronic and energy devices with enhanced properties that exceed those of the “normal” cubic form of silicon used today.

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